Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2724-2727

  Gurskii, A L ^a   Lutsenko, E V ^a   Pavlovskii, V N ^a   Zubialevich, V Z ^a   Yablonskii, G P ^a   Aleksiejunas, R ^b   Jarasiunas K ^b   Letertre, F ^c   Faure, B ^c   Schineller, B ^d   Alam, A ^d   Heuken, M ^d   Dikme, Y ^e   Kalisch, H ^e   Jansen, R H ^e  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b VILNIUS UNIVERSITY   (Lithuania)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d AIXTRON AG   (Germany)

^e RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ENERGY EFFICIENCY; GALLIUM NITRIDE; HETEROJUNCTIONS; SILICON;

CARRIER LIFETIMES; DIFFRACTION EFFICIENCY; FOUR-WAVE MIXING (FWM); LASER THRESHOLDS;

PHOTOLUMINESCENCE;

EID: 27344460078     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461449     Document Type: Conference Paper

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