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Volumn , Issue 7, 2003, Pages 2304-2308

Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes

(10) Netzel, C a Heppel, S a Hitzel, F a Miller, S b Weimar, A b Bruderl G b Lugauer, H J b Lell, A b Harle V b Hangleiter, A a

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

b OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; EXCITATION POINTS; LASER PERFORMANCE; LASER STRUCTURES; NON-RADIATIVE RECOMBINATIONS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE; UNDER PULSED EXCITATIONS;

LASER EXCITATION; LIGHT EMITTING DIODES; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; STRUCTURAL DESIGN;

PULSED LASERS;

EID: 27344447660 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303357 Document Type: Conference Paper

Times cited : (4)

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