Gain characteristics of InGaN-GaN quantum wells

IEEE Journal of Quantum Electronics

Volumn 36, Issue 9, 2000, Pages 1058-1064

  Jiang, Hongtao ^a,b,c,d   Singh, Jasprit ^a  

^a University of Michigan   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELDS; PIEZOELECTRICITY; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

CARRIER INJECTION; GAIN SPECTRUM; GALLIUM NITRIDE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034273223     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.863958     Document Type: Article

References (18)

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