Activation of beryllium-implanted GaN by two-step annealing

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Sun, Yuejun ^a   Tan, Leng Seow ^a   Chua, Soo Jin ^a   Prakash, Savarimuthu ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BERYLLIUM; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL ACTIVATION; DIFFUSION IN SOLIDS; HALL EFFECT; ION IMPLANTATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

ACTIVATION EFFICIENCY; BERYLLIUM IMPLANTED GALLIUM NITRIDE; ENHANCED DIFFUSION; IONIZATION ENERGY; SHEET HOLE CONCENTRATIONS; TWO STEP ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033718209     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)