Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs [100] by solid source molecular beam epitaxy

Thin Solid Films

Volumn 488, Issue 1-2, 2005, Pages 56-61

  Cheah, W K ^a   Fan, W J ^a   Yoon, S F ^a   Tan, K H ^a   Liu, R ^b   Wee, A T S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

GaAsN; MBE; PL; SIMS; Surfactant; XRD

Indexed keywords

COMPOSITION; CRYSTAL IMPURITIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; GAASN; OPTICAL EMISSION; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); XRD;

ANTIMONY;

EID: 23044464869     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.040     Document Type: Article

References (27)

1. F. Dimroth, A. Howard, J.K. Shurtleff, and G.B. Stringfellow J. Appl. Phys. 91 2002 3687
2. L. Zhang, H.F. Tang, J. Schieke, M. Mavrikakis, and T.F. Kuech J. Appl. Phys. 92 2002 2304
3. K.-S. Kim, Y. Takakuwa, T. Abukawa, and S. Kono J. Cryst. Growth 186 1998 95
4. E. Kaxiras Mater. Sci. Eng., B 30 1995 175
5. M. Weyers, M. Sato, and H. Ando Jpn. J. Appl. Phys., Part. 2 31 1992 L853
6. W.G. Bi, and C.W. Tu Appl. Phys. Lett. 70 1997 1608
7. K. Uesugi, N. Morooka, and I. Suemune Appl. Phys. Lett. 74 1999 1254
8. X. Yang, M.J. Jurkovic, J.B. Heroux, and W.I. Wang Appl. Phys. Lett. 75 1999 178
9. X. Yang, J.B. Hreoux, M.J. Jurkovic, and W.I. Wang Appl. Phys. Lett. 76 2000 795
10. V. Gambin, W. Ha, M. Wistey, H. Yuen, S.R. Bank, S.M. Kim, and J.S. Harris Jr. IEEE J. Sel. Top. Quantum Electron 8 2002 795
11. S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, and J.S. Harris Jr. J. Cryst. Growth 251 2003 367
12. J.C. Harmand, G. Ungaro, L. Largeau, and G. Le Roux Appl. Phys. Lett. 77 2000 2482
13. K. Volz, V. Gambin, W. Ha, M.A. Wistey, H. Yuen, S. Bank, and J.S. Harris J. Cryst. Growth 251 2003 360
14. J.-C. Harmand, A. Caliman, E.V.K. Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, and I.F.L. Dias Semicond. Sci. Technol. 17 2002 778
15. F. Bousbih, S. Ben Bouzid, R. Chtourou, F.F. Charfi, J.C. Harmand, and G. Ungaro Mater. Sci. Eng., C 21 2002 251
16. S.A. Lourenço, I.F.L. Dias, L.C. Poças, J.L. Duarte, J.B.B. de Oliveira, and J.C. Harmand J. Appl. Phys. 93 2003 4475
17. J.C. Harmand, G. Ungaro, J. Ramos, E.V.K. Rao, G. Saint-Girons, R. Teissier, G. Le Roux, L. Largeau, and G. Patriarche J. Cryst. Growth 227 2001 553
18. W.K. Cheah, W.J. Fan, S. Wicaksono, S.F. Yoon, and K.H. Tan J. Cryst. Growth 254 2003 305
19. Y. Gao J. Appl. Phys. 64 1988 3760
20. P.K. Chu, Y. Gao, and J.W. Erickson J. Vac. Sci. Technol., B 16 1998 197
21. R. Yakimova, P. Omling, B.H. Yang, L. Samuelson, J.-O. Fornell, and L. Ledebo Appl. Phys. Lett. 59 1991 1323
22. P.F. Fewster J. Appl. Crystallogr. 22 1989 64
23. P.F. Fewster J. Appl. Crysallogr. 25 1992 714
24. K. Uesugi, N. Morooka, and I. Suemune Appl. Phys. Lett. 74 1999 1254
25. P.D. Brewer, D.H. Chow, and R.H. Miles J. Vac. Sci. Technol., B 14 1996 2335
26. R.P. Campion, K.W. Edmonds, L.X. Zhao, K.Y. Wang, C.T. Foxon, B.L. Gallagher, and C.R. Staddon J. Cryst. Growth 247 2003 42
27. I. Langmuir J. Am. Chem. Soc. 40 1918 1361