Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Journal of Crystal Growth

Volumn 275, Issue 3-4, 2005, Pages 440-447

  Cheah, W K ^a   Fan, W J ^a   Yoon, S F ^a   Ng, T K ^a   Loke, W K ^a   Zhang, D H ^a   Mei, T ^a   Liu, R ^b   Wee, A T S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A1. High resolution X ray diffraction; A1. Photoluminescence; A1. Secondary ion mass spectroscopy; A3. Molecular beam epitaxy; B1. GaAsN; B1. InGaAsN

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR PLASMAS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BANDGAP EMISSIONS; GALLIUM ARSENIDE NITROGEN (GAASN); HIGH RESOLUTION X-RAY DIFFRACTION; INDIUM GALLIUM ARSENIDE NITROGEN (INGAASN);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 14844366136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.020     Document Type: Article

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