High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures

Journal of Applied Physics

Volumn 85, Issue 4, 1999, Pages 2119-2123

  Buschmann, V ^a   Rodewald, M ^a   Fuess, H ^a   Van Tendeloo, G ^b   Schaffe C ^c,d  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d SIEMENS AG ÖSTERREICH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRONIC PROPERTIES; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; POINT DEFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCHOTTKY BARRIER DIODES; SURFACE STRUCTURE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; INTERFACIAL CONFIGURATION; SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0033556948     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369512     Document Type: Article

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