Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO 2

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1928-1930

  Li, Qiming ^a   Jiang, Ying Bing ^a   Xu, Huifang ^a   Hersee, Stephen ^a   Han, Sang M ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; SPATIAL RESOLUTIONS; STRAIN DENSITY; THIN LAYERS;

EPITAXIAL GROWTH; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OXIDATION; POLYCRYSTALS; SEMICONDUCTING SILICON; SILICA; SINGLE CRYSTALS; STACKING FAULTS; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 5444226970     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790027     Document Type: Article

References (17)

1. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
2. J. C. Bean, L. C. Feldmen, A. T. Fiory, S. Nakahara, and I. K. Robinson, J. Vac. Sci. Technol. A 2, 436 (1984).
3. J. M. Baribeau, T. E. Jackman, P. Maigne, D. C. Houghton, and M. W. Denhoff, J. Vac. Sci. Technol. A 5, 1898 (1987); J. M. Baribeau, T. E. Jackman, D. C. Houghton, P. Maigne, and M. W. Denhoff J. Appl. Phys. 63, 5728 (1988).
4. J. M. Baribeau, T. E. Jackman, P. Maigne, D. C. Houghton, and M. W. Denhoff, J. Vac. Sci. Technol. A 5, 1898 (1987); J. M. Baribeau, T. E. Jackman, D. C. Houghton, P. Maigne, and M. W. Denhoff J. Appl. Phys. 63, 5728 (1988).
5. M. T. Curries, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
6. S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140 (1986).
7. D. Zubia and S. D. Hersee, J. Appl. Phys. 85, 6492 (1999).
8. A. A. Shklyaev and M. Ichikawa, Surf. Sci., 514, 19 (2002).
9. K. Kobayashi, H. Unno, H. Taskizawa, and S. Adachi, Jpn. J. Appl. Phys., Part 1 Part 1 35, 5926 (1996).
10. V. I. Vdovin, Microscopy of Semiconductor Materials 1995 (Oxford University, Oxford, 1995), p. 187.
11. J. M. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
12. S. P. Muraka and G. Quintana, J. Appl. Phys. 48, 46 (1977); T. Y. Tan and U. Gosele, Appl. Phys. Lett. 39, 86 (1981); T. Y. Tan and U. Gosele, ibid. 40, 616 (1982).
13. S. P. Muraka and G. Quintana, J. Appl. Phys. 48, 46 (1977); T. Y. Tan and U. Gosele, Appl. Phys. Lett. 39, 86 (1981); T. Y. Tan and U. Gosele, ibid. 40, 616 (1982).
14. S. P. Muraka and G. Quintana, J. Appl. Phys. 48, 46 (1977); T. Y. Tan and U. Gosele, Appl. Phys. Lett. 39, 86 (1981); T. Y. Tan and U. Gosele, ibid. 40, 616 (1982).
15. Q. Li, S. M. Han, S. R. J. Brueck, S. Hersee, Y.-B. Jiang, and H. Xu, Appl. Phys. Lett. 83, 5032 (2003).
16. J. F. Morar, B. S. Myerson, U. O. Karisson, F. J. Himpsel, F. R. McFeely, D. Rieger, A. Ibrahimi, and J. Yarmoff, Appl. Phys. Lett. 50, 463 (1987); S. Surnev, Surf. Sci, 282, 10 (1993).
17. J. F. Morar, B. S. Myerson, U. O. Karisson, F. J. Himpsel, F. R. McFeely, D. Rieger, A. Ibrahimi, and J. Yarmoff, Appl. Phys. Lett. 50, 463 (1987); S. Surnev, Surf. Sci, 282, 10 (1993).