Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

Thin Solid Films

Volumn 493, Issue 1-2, 2005, Pages 30-34

  Miquita, D R ^a   Paniago, R ^a   Rodrigues, W N ^a   Moreira, M V B ^a   Pfannes, H D ^a   De Oliveira, A G ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

M ssbauer spectroscopy; Silicides; Solid phase epitaxy; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; MOSSBAUER SPECTROSCOPY; PHASE TRANSITIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

MÖSSBAUER SPECTROSCOPY; REACTIVE DEPOSITION EPITAXY (RDE); SILICIDES; SOLID PHASE EPITAXY;

SILICON;

EID: 27144506060     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.011     Document Type: Article

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