Mössbauer-effect study of metastable c-FeSi synthesized by molecular beam epitaxy (MBE) and by ion implantation

Phase Transitions

Volumn 76, Issue 4-5, 2003, Pages 437-444

  Walterfang, M ^a   Keune, W ^a   Reuther, H ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ion implantation; Metastable iron silicides; M ssbauer spectroscopy; Molecular beam epitaxy; X ray diffraction

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ION IMPLANTATION; IRON COMPOUNDS; LATTICE CONSTANTS; MOSSBAUER SPECTROSCOPY; SILICON; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

CONVERSION ELECTRON MÖSSBAUER SPECTROSCOPY (CEMS); LAYERS SYNTHESIS; METASTABLE IRON SILICIDES;

MOLECULAR BEAM EPITAXY;

EID: 27144446778     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/0141159021000051361     Document Type: Article

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