Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1785-1787

  Ray, S K ^a   Groom, K M ^a   Hogg, R A ^a   Liu, H Y ^a   Hopkinson, M ^a   Badcock, T ^a   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dot in well (DWELL); Quantum dots (QDs)

Indexed keywords

CURRENT DENSITY; ELECTROPLATING; ETCHING; GOLD PLATING; GROUND STATE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

DOT-IN WELL (DWELL)LAYERS; RIDGE WAVEGUIDE DESIGN; TEMPERATURE PERFORMANCE;

SEMICONDUCTOR LASERS;

EID: 27144493712     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.853530     Document Type: Article

References (7)

1. Y. Arakawa and H. Sakaki, "Multidimentional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, Jun. 1982.
2. 0 =∝) of p-doped 1.3 μm quantum dot lasers," Appl. Phys. Lett., vol. 85, pp. 5164-5166, 2004.
3. K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, "Temperature-insensitive eye-operating under 10-Gb/s modulation of 1.3 μm P-doped quantum-dot lasers without current adjustment," Jpn. J. Appl. Phys., vol. 43, no. 8B, pp. L1124-L1126, 2004.
4. H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland, "Improved performance of 1.3 μm multiplayer InAS/ GaAs quantum dot laser using a high-growth-temperature GaAs spacer layer," Appl. Phys. Lett., vol. 85, pp. 704-706, 2004.
5. H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray, and M. S. Skolnick, "Influence of the spacer layer growth temperature on multiplayer InAs/GaAs quantum dot structure," J. Appl. Phys., vol. 96, pp. 1988-1992, 2004.
6. S. K. Ray, K. M. Groom, H. Y. Liu, M. Hopkinson, R. A. Hogg, I. R. Seller, T. Badcock, A. J. Ramsay, D. J. Mowbray, and M. S. Skolnick, "Growth, fabrication and operating characteristics of ultra-low threshold 1.31 μm quantum dot lasers," Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2520-2522, 2005, to be published.
7. A. Markus, J. X. Chen, C. Paranthoen, C. Platz, O. Gauthier-Lafaye, and A. Fiore, "Simultaneous two-state lasing in quantum dot lasers," Appl. Phys. Lett., vol. 82, pp. 1818-1820, 2003.