Modeling and experimental validation of sharpening mechanism based on thermal oxidation for fabrication of ultra-sharp silicon nanotips

IEEE Transactions on Nanotechnology

Volumn 4, Issue 5, 2005, Pages 548-555

  Agache, Vincent ^a,c,d   Ringot, Roger ^b   Bigotte, Patrice ^b,e   Senez, Vincent ^a,b,f   Legrand, Bernard ^b,e,g   Buchaillot, Lionel ^b,h   Collard, Dominique ^a,e,i  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b INSTITUT D ELECTRONIQUE   (France)

^c Centre National de la Recherche Scientifique   (Japan)

^d Fujita Laboratory   (Japan)

^e CNRS   (France)

^f Centre National de la Recherche Scientifique ^*

^g Institut Superieur de l'Electronique et du Numerique   (France)

^h MEMS Research Group   (China)

ⁱ UNIVERSITY OF TOKYO   (Japan)

Author keywords

Dry oxidation; Sharpening effect; Silicon tips; Stress effects; Thermal oxidation

Indexed keywords

DRY OXIDATION; SHARPENING EFFECT; SILICON TIPS; STRESS EFFECTS; THERMAL OXIDATION;

APPROXIMATION THEORY; COMPUTER SIMULATION; NANOFILTRATION; NANOSTRUCTURED MATERIALS; OXIDATION; PARAMETER ESTIMATION;

SILICON;

EID: 26644460877     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851386     Document Type: Article

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