Performance evaluation of field-enhanced P-channel split-gate flash memory

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 670-672

  Chu, Wen Ting ^a   Lin, Hao Hsiung ^a   Wang, Yu Hsiung ^b   Hsieh, Chia Ta ^b   Lin, Yung Tao ^b   Wang, Chung S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Field enhanced structure; Flash memory; P channel; Split gate

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

CHANNEL-HOT-HOLE IMPACT IONIZATION; FIELD-ENHANCED FLASH MEMORY; FIELD-ENHANCED STRUCTURE; PERFORMANCE EVALUATION; SPLIT-GATE FLASH MEMORY;

FLASH MEMORY;

EID: 26444507907     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.853633     Document Type: Article

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