Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 616-618

  Chu, Wen Ting ^a   Lin, Hao Hsiung ^a   Tu, Yeur Luen ^b   Wang, Yu Hsiung ^b   Hsieh, Chia Ta ^b   Sung, Hung Cheng ^b   Lin, Yung Tao ^b   Tsai, Chia Shiung ^b   Wang, Chung S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; FLASH MEMORY; NITRIDING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIA TREATMENT; FLOATING GATE SPACING; OXYNITRIDE THICKNESS; SPLIT GATE FLASH MEMORY;

CMOS INTEGRATED CIRCUITS;

EID: 4444347821     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.833825     Document Type: Article

References (6)

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