New divided-source structure to eliminate instability of threshold voltage in P-channel Flash memory using channel hot-hole-induced-hot-electron programming

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 203-205

  Lin, Frank Ruei Lin,g ^a   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE STRUCTURES; STABILITY; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

CHANNEL HOT HOLE INDUCED HOT ELECTRON PROGRAMMING; DIVIDED SOURCE STRUCTURE; NOR ARRAY; P-CHANNEL FLASH MEMORY;

CELLULAR ARRAYS;

EID: 0032599209     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)