Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 1-2, 2005, Pages 82-87

  Gaubas, E ^a   Pobedinskas, P ^a   Vaitkus, J ^a   Uleckas, A ^a   Zukauskas A ^a   Blue, A ^b   Rahman, M ^b   Smith, K M ^b   Aujol, E ^c   Beaumont, B ^c   Faurie, J P ^c   Gibart, P ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c LUMILOG ^*  (France)

Author keywords

GaN; Microwave absorption; Multi trapping; Photoconductivity; Photoluminescence; Radiation defects; Recombination

Indexed keywords

ABSORPTION; GALLIUM COMPOUNDS; IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; PHOTOLUMINESCENCE;

GAN; MICROWAVE ABSORPTION; MULTI-TRAPPING; RADIATION DEFECTS; RECOMBINATION;

PHOTOCONDUCTIVITY;

EID: 26444504854     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.011     Document Type: Conference Paper

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