Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5258-5260

  Gaubas, E ^a   Kazlauskas, K ^a   Tomasiunas R ^a   Vaitkus, J ^a   Zukauskas A ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL LASERS; EPITAXIAL GROWTH; INSULATING MATERIALS; IRRADIATION; MATERIALS SCIENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOLUMINESCENCE; POINT DEFECTS; QUENCHING; RELAXATION PROCESSES; TRANSIENTS; ULTRAVIOLET RADIATION; X RAYS;

CONTACT PHOTOCONDUCTIVITY (CPC); MICROWAVE ABSORPTION TRANSIENTS; PHOTOEXCITATION; RADIATION DEFECTS; X-RAY IRRADIATION;

GALLIUM NITRIDE;

EID: 3142656006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1764939     Document Type: Article

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