A novel technique to grow Ge quantum dots on porous Si by ultrahigh vacuum chemical vapor deposition

Journal of Materials Science Letters

Volumn 21, Issue 2, 2002, Pages 129-131

  Huang, Jingyun ^a   Ye, Zhizhen ^a   Wang, Lei ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; ULTRAHIGH VACUUM; X RAY DIFFRACTION;

ANODIZATION;

POROUS SILICON;

EID: 0037081917     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1014288913951     Document Type: Article

References (17)