Crystal Interface Shape Simulation during SiC Sublimation Growth

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 111-114

  Bottcher K ^a   Schulz, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Crystal Vapor Interface; Global Heat; Mass Transfer; Numerical Modeling; SiC; Sublimation Growth

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT TRANSFER; INTERFACES (MATERIALS); MASS TRANSFER; SUBLIMATION; TRANSPARENCY;

THERMOELASTIC STRESSES;

SILICON CARBIDE;

EID: 0242413805     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.111     Document Type: Conference Paper

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