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Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 157-161

Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substrates

(2) Kang, Junyong a Ogawa, Tomoya b

a XIAMEN UNIVERSITY (China)

b GAKUSHUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PRECIPITATION (CHEMICAL); SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033900445 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00670-3 Document Type: Article

Times cited : (6)

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