GaN Schottky barrier ultraviolet detector

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 6, 2004, Pages 711-714

  Wang, Jun ^a   Zhao, Degang ^a   Liu, Zongshun ^a   Wu, Mo ^a   Jin, Ruiqin ^a   Li, Na ^a   Duan, Lihong ^a   Zhang, Shuming ^a   Zhu, Jianjun ^a   Yang, Hui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; Responsivity; Schottky; Ultraviolet detector

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; ULTRAVIOLET DETECTORS;

RESPONSIVITY; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 7944236544     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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