Simulation of GaN and InGaN p-i-n and n-i-n photo-devices

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 336-340

  Poochinda, Kunakorn ^a   Chen, Tai Chang ^a   Stoebe, Thomas G ^a   Ricker, N Lawrence ^a  

^a University of Washington   (United States)

Author keywords

A1. Computer simulation; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; INDIUM ALLOYS; IONIZATION; MONOCHROMATORS; PHOTOCURRENTS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SIGNAL TO NOISE RATIO;

BAND GAP ENERGY; PHOTON ENERGY;

GALLIUM NITRIDE;

EID: 0348046461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.023     Document Type: Conference Paper

References (8)

1. Kung P., Zhang X., Walker D., Saxler A., Razeghi M. SPIE. 3287:1998;214.
2. K.K. Ng, Complete Guide to Semiconductor Devices, Wiley, New York, 2002, p. 151.
3. Y.-J. Chiu, S.Z. Zhang, V. Kaman, J.P. Ibbetson, J.E. Bowers, U.K. Mishra, 1999 IEEE LEOS Conference Proceedings, Vol. 2, IEEE, New Jersey, 1999, p. 868.
4. Wu J., Walukiewicz W., Yu K.M., Ager J.W. III, Haller E.E., Lu H., Schaff W.J. Appl. Phys. Lett. 80:2002;4741.
5. Baldanzi A., Bellotti E., Goano M. Phys. Stat. Sol. (b). 226:2001;425.
6. Schenk H.P.D., Leroux M., de Mierry P. J. Appl. Phys. 88:2000;1525.
7. Silvaco International, ATLAS User's Manual: Device Simulation Software, Santa Clara, 1998, p. 3-1.
8. G.E. Bunea, S.T. Dunham, T.D. Moustakas, MRS Int. J. Nitride Semicond. 4S1 (1999) G6.41.