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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 239, Issue 4, 2005, Pages 433-439

Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate

(6) Chen, Changchun a Yu, Benhai a Liu, Jiangfeng a Cao, Jianqing b Zhu, Dezhang b Liu, Zhihong c

a XINYANG NORMAL UNIVERSITY (China)

b SHANGHAI INSTITUTE OF APPLIED PHYSICS (China)

c TSINGHUA UNIVERSITY (China)

Author keywords

Ion implantation; SiGe; Strain relaxation; UHVCVD

Indexed keywords

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ION IMPLANTATION; MICROSTRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN;

IMPLANTATION ENERGY; SIGE; STRAIN RELAXATION; UHVCVD;

THIN FILMS;

EID: 25644461162 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2005.04.119 Document Type: Article

Times cited : (4)

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