Formation of thin SiGe virtual substrates by ion implantation into Si substrates

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 99-103

  Sawano, K ^a   Koh, S ^a   Hirose, Y ^b   Hattori, T ^b   Nakagawa, K ^c   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Ion implantation; Molecular beam epitaxy; SiGe; Strain relaxation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

IMPLANTATION INDUCED DEFECTS; STRAIN RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142304536     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.093     Document Type: Conference Paper

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