Excimer-laser-induced in-situ fluorine passivation effects on polycrystalline silicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2247-2250

  Kim, Cheon Hong ^a   Jeon, Jae Hong ^a   Yoo, Juhn Suk ^a   Park, Kee Chan ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Excimer laser; Fluorine; In situ passivation; Poly Si; SiOxFy; Stability; TFT; Trap state density

Indexed keywords

EID: 0000782864     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2247     Document Type: Article

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