A 240 W power heterojunction FET with high efficiency for W-CDMA base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 645-648

  Takenaka, I ^a   Ishikura, K ^a   Takahashi, K ^a   Kishi, K ^a   Ogasawara, Y ^a   Hasegawa, K ^a   Takahashi, H ^a   Emori, F ^a   Iwata, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC CURRENTS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; JUNCTION GATE FIELD EFFECT TRANSISTORS; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; TUNING; WIRELESS TELECOMMUNICATION SYSTEMS;

ADJACENT CHANNEL LEAKAGE POWER RATIO; DRAIN CURRENT; HETEROJUNCTION FIELD EFFECT TRANSISTOR; POWER ADDED EFFICIENCY; SECOND HARMONIC TUNING;

POWER AMPLIFIERS;

EID: 0035686745     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Low distortion high power GaAs pseudomorphic heterojunction FETs for L/S-band digital cellular base stations
2. A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier
3. A 240W push-pull GaAs power FET for W-CDMA base stations
4. 120 watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications