Control of epitaxial layers grown on 4H-SiC: From 3C micro-crystalline inclusions to type II quantum well structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 593-597

  Juillaguet, S ^a   Balloud, C ^a   Souliere V ^b   Sartel, C ^b   Camassel, J ^a   Monteil, Y ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STRUCTURE; LATTICE PERTURBATION; LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL); MICRO-CRYSTALLINE INCLUSIONS;

DEFECTS; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; THERMAL EFFECTS;

SILICON CARBIDE;

EID: 25444472885     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460435     Document Type: Conference Paper

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