A novel nanolithographic concept using crack-assisted patterning and self-alignment technology

Journal of the Electrochemical Society

Volumn 145, Issue 6, 1998, Pages 2120-2131

  Gorokhov, E B ^a   Prinz, V Ya ^a   Noskov, A G ^a   Gavrilova, T A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRACKS; ELECTRODEPOSITION; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; RESIDUAL STRESSES; SILICA; SILICON NITRIDE; SUBSTRATES;

NANOLITHOGRAPHY; SELF ALIGNMENT TECHNOLOGY;

MASKS;

EID: 0032099710     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838606     Document Type: Article

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