Analysis of LPCVD process conditions for the deposition of low stress silicon nitride. Part I: Preliminary LPCVD experiments

Materials Science in Semiconductor Processing

Volumn 5, Issue 1, 2002, Pages 51-60

  Olson, James M ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

Index of refraction; Low stress silicon nitride; LPCVD; Stress; Uniformity

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; PARTIAL PRESSURE; REFRACTIVE INDEX; RESIDUAL STRESSES; SEMICONDUCTING FILMS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON NITRIDE;

EID: 0036485426     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00058-6     Document Type: Article

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11. An analysis of LPCVD system parameters for polysilicon, silicon nitride and silicon dioxide deposition