Electrical measurements of structural defects in Cd0.9Zn 0.1Te by atomic force microscopy based methods

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 644-647

  Ruzin, A ^a   Torchinski, I ^a   Goldfarb, I ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; DETECTORS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; GAMMA RAYS; INGOTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; TELLURIUM COMPOUNDS;

BROMINE METHANOL (BRME); ELECTRIC FORCE MICROSCOPY (EFM); NANO-INDENTATION; SURFACE POTENTIAL DIFFERENCE (SPD);

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 2542443603     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/014     Document Type: Article

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