Study of CdTe etching process in alcoholic solutions of bromine

Semiconductor Science and Technology

Volumn 13, Issue 8, 1998, Pages 890-894

  Kotina, I M ^a   Tukhkonen, L M ^a   Patsekina, G V ^a   Shchukarev, A V ^b   Gusinskii, G M ^c  

^a PETERSBURG NUCLEAR PHYSICS INSTITUTE   (Russian Federation)

^b Mekhanobr Analyt Co   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2542494733     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/8/011     Document Type: Article

References (17)

1. Sobiesierski Z, Dharmadasa I M and Williams H 1988 Appl. Phys. Lett. 53 2623
2. Amirtharaj P M and Dhar N K 1990 J. Appl. Phys. 67 3107
3. Garcia-Garcia J, Ganzalez-Hermandez J, Mendoza-Alvarez J G, Elias Lopez Cruz and Gerardo Conteras-Puente 1990 J. Appl. Phys. 67 3810
4. Kim M D, Kang T W, Kim G H, Han M S, Cho H D, Kim J M, Jeoung Y T and Kim T W 1993 J. Appl. Phys. 73 4074
5. Shaw J L, Viturro R E, Brillson L J and D La Graffe 1988 Appl. Phys. Lett. 53 1723
6. Haring J P, Werthen J G, Bube R H, Gulbrandsen L, Jansen W and Luscher P 1983 J. Vac. Sci. Technol. A 1(3) 1469
7. Ponce F A, Sinclair R and Bube R H 1981 Appl. Phys. Lett. 39 951
8. Dharmadasa I M, Thornton J M and Williams R H 1989 Appl. Phys. Lett. 54 137
9. Hage-Ali M, Stuck R, Saxena A N and Siffert P 1979 Appl. Phys. 19 25
10. Perillo E, Spandaccini G, Vigilante M, Savastano M, Mancini A M and A. Quirini, Vazanelli L and Giorgi R 1989 Vacuum 39 125
11. Dharmadaza I M, Roberts G G and Retty M C 1982 J. Appl. Phys. 15 901
12. Konova A A, Shepov A and Nedev I 1986 Thin Sol. Films 140 189
13. Amirtharaj P M and Pollak F H 1984 Appl. Phys. Lett. 45 789
14. Handbook of X-ray Photoelectron Spectroscopy 1992 ed J Chastain and Perkin-Elmer (MN: Physical Electronics Division, Eden Prairie)
15. Mason M G 1983 Phys. Rev.B 27 748
16. Hage-Aly M and Seffert P 1995 Semiconductors and Semimetals vol 43 (Academic) p 268
17. Aspnes D E and Arwin H 1984 J. Vac. Sci. Technol. A 2(3) 1309