Optical characteristic of the strain-controlled GaN epitaxial layer grown on 6H-SiC substrate by an adapting (GaN/AlN) multibuffer layer

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 151-156

  Horie, M ^a   Ishihara, Y ^a   Yamamoto, J ^a   Kurimoto, M ^b   Takano, T ^a   Kawanishi, H ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; RESIDUAL STRESSES; SILICON CARBIDE; STRAIN; SUBSTRATES;

MULTIBUFFER LAYERS;

GALLIUM NITRIDE;

EID: 0036650610     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<151::AID-PSSA151>3.0.CO;2-3     Document Type: Conference Paper

References (9)