Characterization of ultra-low-load (νN) nanoindents in GaAs(100) using a cube corner tip

Smart Materials and Structures

Volumn 14, Issue 5, 2005, Pages 963-970

  Taylor, Curtis R ^a   Malshe, Ajay P ^a   Salamo, Gregory ^b   Prince, Robin N ^a   Riester, Laura ^c   Cho, Seong Oh ^b  

^a 3202 Bell Engineering Center   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; DIAMONDS; DOPING (ADDITIVES); ELASTIC MODULI; HARDNESS; INDENTATION; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SILICON;

INDENT VOLUME; NANOINDENTATION; NANOINDENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 25144492172     PISSN: 09641726     EISSN: None     Source Type: Journal    
DOI: 10.1088/0964-1726/14/5/034     Document Type: Conference Paper

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