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Journal of Materials Research

Volumn 16, Issue 12, 2001, Pages 3347-3350

Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

(3) Lloyd, S J a Molina Aldareguia, J M a Clegg, W J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRACK INITIATION; DEFORMATION; HARDNESS; INDENTATION; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NANOINDENTS;

SINGLE CRYSTALS;

EID: 0035739168 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2001.0461 Document Type: Article

Times cited : (67)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.