Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 285-288

  Guzman A ^a   Sanchez Rojas J L ^a   Tijero, J M G ^a,b   Hernando, J ^a   Calleja, E ^a   Munoz E ^a   Vergara, G ^c   Almazan R ^c   Sanchez F J ^c   Verdu M ^c   Montojo, M T ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Laboratorio de Ensayos   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR GROWTH;

QUANTUM WELL INFRARED DETECTOR; TRIANGULAR CONFINEMENT BARRIER; VOLTAGE TUNABLE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17944374692     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/301     Document Type: Article

References (9)

1. Comparison of the performance of quantum well and conventional bulk infrared photodetectors
2. Growth and characterization of a bound to quasi-continuum QWIP with Al-graded triangular confinement barriers
3. A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked multiquantum wells
4. Influences of MBE growth processes on photovoltaic 3-5 μm intersubband photodetectors
5. Intersubband transitions in single AlGaAs/GaAs quantum wells studied by fourier transform infrared spectroscopy
6. Two-color infrared detection using intersubband transitions in multiple step quantum wells with superlattice barriers
7. Voltage-tunable two-color detection by interband and intersubband transitions in a p-i-n-i-n structure
8. Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of the intersubband infrared detectors
9. Space-charge effects in photovoltaic double barrier quantum well infrared detectors