GaAs-based modulation-doped quantum-well infrared photodetectors for single- and two-color detection in 3-5 μm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 5, 2002, Pages 992-997

  Luna, Esperanza ^a   Guzmán, Alvaro ^a   Sánchez Rojas, José Luis ^a   Sánchez, Javier Miguel ^a   Muñoz, Elías ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INFRARED DETECTORS; MODULATION; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

PHOTOVOLTAIC DETECTORS; SEMICONDUCTOR EPITAXIAL LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036765495     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.804240     Document Type: Article

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