Mechanisms for si dopant migration in molecular beam epitaxy AlxGa1-xxAs

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 4056-4060

  Mills Jr , A P ^a   Pfeiffer, L N ^a   West, K W ^a   Magee, C W ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Evans East Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141879377     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1308073     Document Type: Article

References (12)

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2. E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, UK, 1993).
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9. See, for example, A. P. Mills, Jr., A. P. Ramirez, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 83, 2805 (1999).
10. SIMS analysis done at Evans East. East Windsor, NJ 08520.
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12. E. F. Schubert, Doping in III-IV Semiconductors (Cambridge University Press, Cambridge, UK, 1993), pp. 339-349.