On the growth conditions of 3-5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy

Infrared Physics and Technology

Volumn 44, Issue 5-6, 2003, Pages 391-398

  Luna, E ^a   Guzman A ^a   Trampert, A ^b   Sanchez Rojas J L ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Infrared photodetectors; Molecular beam epitaxy; Photovoltaic effects; Quantum well devices; Transmission electron microscopy

Indexed keywords

ELECTRIC FIELDS; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

DARK CURRENT;

INFRARED DETECTORS;

EID: 0141904588     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(03)00160-9     Document Type: Conference Paper

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