The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectors

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 201-204

  Tsai, K L ^a   Lee, C P ^a   Chen, P C ^a   Tsang, J S ^a   Tsai, C M ^a   Fan, J C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS; INFRARED DETECTORS; LIGHT ABSORPTION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

BARRIER STRUCTURE; DARK CURRENT; DOUBLE BARRIER QUANTUM WELL INFRARED PHOTODETECTORS; OPTICAL GAIN; OPTICAL TRANSITION ENERGY;

PHOTODETECTORS;

EID: 0030081534     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00124-7     Document Type: Review

References (9)

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