Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 355-358

  Danno, K ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deep level; DLTS; Intrinsic defect; Midgap; Pn diode

Indexed keywords

ACTIVATION ENERGY; CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRON EMISSION; SILICON CARBIDE; VALENCE BANDS;

DEEP LEVEL; INTRINSIC DEFECT; MINORITY CARRIER TRAPS;

EPILAYERS;

EID: 25144471382     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.355     Document Type: Conference Paper

References (8)

1. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell: phys. stat. solidi (a), Vol. 162 (1997), p. 199.
2. C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janzén, J. L. Lindström, S. Savage and N. Nordell: J. Appl. Phys., Vol. 81 (1997), p. 6155.
3. K. Fujihira, T. Kimoto and H. Matsunami: J. Cryst. Growth, Vol. 255 (2003), p.136.
4. T. Kimoto, K. Hashimoto and H. Matsunami: Jpn. J. Appl. Phys. Vol. 42 (2003), p. 7294.
5. L. Storasta: Ph. D thesis, Linköping University (2003).
6. W. Suttrop, G. Pensl and P. Lanig: Appl. Phys. A, Vol. 51 (1990), p. 231.
7. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk and M. Maier: phys. stat. solidi (a), Vol. 162 (1997), p. 277.
8. W. J. Choyke: Mater. Res. Bull, Vol. 4 (1969), p. 141.