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Microelectronics Journal

Volumn 36, Issue 11, 2005, Pages 1002-1005

Design of InGaN/AlInGaN superlattices for white-light device applications

(4) Rodrigues, S C P a D'Eurydice, M N b Sipahi, G M b Da Silva Jr , E F a

a FEDERAL UNIVERSITY OF PERNAMBUCO (Brazil)

b UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

Eletroluminescence; Nitrides semiconductors; Pholuminescence

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM NITRIDE; COMPOSITION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HAMILTONIANS; HETEROJUNCTIONS; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES;

HETEROSTRUCTURED DIODES; NITRIDES SEMICONDUCTORS; PHOLUMINESCENCE;

SUPERLATTICES;

EID: 25144452303 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2005.04.006 Document Type: Conference Paper

Times cited : (3)

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