Influence of germanium on the formation of Ni Si 1-x Ge x on (111)-oriented Si 1-x Ge x

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Jarmar, T ^a   Ericson, F ^a   Smith, U ^a   Seger, J ^b   Zhang, S L ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; AXIOTAXY; EPITAXIAL ALIGNMENT; PREFERENTIAL ORIENTATION;

ANNEALING; EPITAXIAL GROWTH; GERMANIUM; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

NICKEL ALLOYS;

EID: 25144448575     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2034081     Document Type: Article

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