Tailoring of high-temperature photoluminescence in InAsGaAs bilayer quantum dot structures

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Mazur, Yu I ^a   Wang, Zh M ^a   Tarasov, G G ^a,b   Kunets, Vas P ^a   Salamo, G J ^a   Zhuchenko, Z Ya ^b   Kissel, H ^c  

^a UNIVERSITY OF ARKANSAS   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; INTERLAYER COUPLINGS; QUANTUM DOT STRUCTURES; SPACE THICKNESS;

ARSENIC; DEPOSITION; GALLIUM; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

INDIUM COMPOUNDS;

EID: 25144444018     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2039271     Document Type: Article

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