Crystallization of reactively sputtered amorphous tungsten nitride film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3368-3371

  Lee, Kee Sun ^a  

^a Kongju National University   (South Korea)

Author keywords

Crystallization; Gate electrode; Rapid thermal annealing (RTA); Tungsten film; Tungsten nitride

Indexed keywords

CRYSTALLIZATION; DECOMPOSITION; DIFFUSION COATINGS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); NITROGEN; RAPID THERMAL ANNEALING; SPUTTERING; TUNGSTEN COMPOUNDS;

DIFFUSION BARRIER; EQUAIXED GRAINS; TUNGSTEN NITRIDE;

AMORPHOUS MATERIALS;

EID: 0042882786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3368     Document Type: Article

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