Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Hosokawa, S ^a   Navarro, D ^a   Miura Mattausch, M ^a   Mattausch, H J ^a   Ohguro, T ^b   Iizuka, T ^b   Taguchi, M ^b   Kumashiro, S ^b   Miyamoto, S ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT ELECTRONS; POTENTIAL GRADIENTS; THERMAL-DRAIN-NOISE; VELOCITY SATURATION;

COMPUTER SIMULATION; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MOSFET DEVICES; PARAMETER ESTIMATION; SPURIOUS SIGNAL NOISE;

ELECTRIC POTENTIAL;

EID: 24644511838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2035875     Document Type: Article

References (11)

1. D. K. Shaeffer and T. H. Lee, IEEE J. Solid-State Circuits 32, 745 (1997).
2. G. Knoblinger, P. Klein, and M. Tiebout, IEEE J. Solid-State Circuits 36, 831 (2001).
3. M. Jamal Deen and C.-H. Chen, Proceedings of the International Conference on Modeling and Simulation of Microsystems (MSM) (2002), p. 694.
4. A. J. Scholten, L. F. Tiemeijer, R. Langevelde, R. J. Havens, R. J. Zeggers-van Duijnhoven, and V. C. Venezia, IEEE Trans. Electron Devices 50, 618 (2003).
5. MEDICI User's Manual, Synopsys Inc., 2003.
6. http://www.starc.or.jp/kaihatu/pdgr/hisim/index.html
7. H. Nyquist, Phys. Rev. 32, 110 (1928).
8. A. A. Abidi, IEEE Trans. Electron Devices 33, 1801 (1986).
9. M. Miura-Mattausch, U. Feldmann, A. Rahm, M. Bollu, and D. Savignac, IEEE Trans. CAD/ICAS 15, 1 (1996).
10. M. Miura-Mattausch, M. Suetake, H. J. Mattausch, S. Kumashiro, N. Shigyo, S. Odanaka, and N. Nakayama, IEEE Trans. Electron Devices 48, 2449 (2001).
11. H. Ueno, D. Kitamaru, M. Tanaka, M. Miura-Mattausch, H. J. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita, and N. Nakayama, IEEE Trans. Electron Devices 49, 1783 (2002).