High throughput EUV-reflectometer for EUV mask-blanks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 2, 2004, Pages 808-817

  Lebert, Rainer ^a   Wies, Christian ^a   Juschkin, Larissa ^a   Jägle, Bernhard ^a   Meisen, Manfred ^a   Aschke, Lutz ^b   Sobel, Frank ^b   Seitz, Holger ^b   Scholze, Frank ^c   Ulm, Gerhard ^c   Walter, Konstantin ^d   Neff, Willi ^d   Bergmann, Klaus ^d   Biel, Wolfgang ^e  

^a AIXUV GmbH   (Germany)

^b Schott Lithotec AG   (Germany)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^d FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTROMAGNETIC WAVE EMISSION; OPTICAL MATERIALS; OPTICAL RESOLVING POWER; PHOTORESISTORS; REFLECTOMETERS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET (EUV) RADIATION; MASS BLANKS; SCALE MASS PRODUCTION;

PHOTOLITHOGRAPHY;

EID: 3843119801     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537012     Document Type: Conference Paper

References (8)

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2. S. D. Hector, EUVL masks: requirements and potential solutions, Proc. SPIE 4688, Emerging Lithographic Technologies VI; R. L. Engelstad; Ed, 134-149 (2002)
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4. SEMI Standard P38-1102, Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks
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8. J. Tümmler, G. Brandt, J. Eden, H. Scherr, F. Scholze, G. Ulm, Characterization of the PTB EUV reflectometry facility for large EUVL optical components, Proc. SPIE 5037, 265-273 (2003)