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Volumn 5753, Issue I, 2005, Pages 195-205

A novel contact hole shrink process for the 65-nm-node and beyond

Author keywords

193nm; 248nm; Bilayer; Contacts; Resist; Shrink

Indexed keywords

193NM; 248NM; BILAYER; MANUFACTURABLE PROCESS; SHRINK;

EID: 24644470446     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599918     Document Type: Conference Paper
Times cited : (10)

References (8)
  • 2
    • 0141611765 scopus 로고    scopus 로고
    • Evaluation of process based resolution enhancement techniques to extend 193nm lithography
    • S. Satyanarayana, C. Cohan, "Evaluation of Process Based Resolution Enhancement Techniques to Extend 193nm Lithography," Proc. SPIE, 5039, 257-268, 2003.
    • (2003) Proc. SPIE , vol.5039 , pp. 257-268
    • Satyanarayana, S.1    Cohan, C.2
  • 4
    • 3843054539 scopus 로고    scopus 로고
    • Strategy for sub-80nm contact holes patterning considering device fabrication
    • J.-Y. Yoon, M. Hata, J.-H. Hah, H.-W. Kim, S.-G. Woo, H.-K. Cho, W.-S. Han, "Strategy for sub-80nm Contact Holes Patterning Considering Device Fabrication," Proc. SPIE, 5376, 196-204, 2004.
    • (2004) Proc. SPIE , vol.5376 , pp. 196-204
    • Yoon, J.-Y.1    Hata, M.2    Hah, J.-H.3    Kim, H.-W.4    Woo, S.-G.5    Cho, H.-K.6    Han, W.-S.7
  • 5
    • 3843056735 scopus 로고    scopus 로고
    • Optimization of resist shrink techniques for contact holes and metal trench ArF lithography at the 90nm technology node
    • C. Wallace, J. Schact, I. H. Huang, R. H. Hsu, "Optimization of Resist Shrink Techniques for Contact Holes and Metal Trench ArF Lithography at the 90nm Technology Node," Proc. SPIE, 5376, 238-244, 2004.
    • (2004) Proc. SPIE , vol.5376 , pp. 238-244
    • Wallace, C.1    Schact, J.2    Huang, I.H.3    Hsu, R.H.4
  • 8
    • 0346305193 scopus 로고    scopus 로고
    • Fluorine atom subsurface diffusion and reaction in photoresist
    • F. Greer. D. Fraser, J. W. Coburn, D. B. Graves, "Fluorine Atom Subsurface Diffusion and Reaction in Photoresist," J. Appl. Phys., 94, 7453-7461, 2003.
    • (2003) J. Appl. Phys. , vol.94 , pp. 7453-7461
    • Greer, F.1    Fraser, D.2    Coburn, J.W.3    Graves, D.B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.