A low temperature, hermetic wafer level packaging method for RF MEMS switch

Proceedings - Electronic Components and Technology Conference

Volumn 2, Issue , 2005, Pages 1103-1108

  Kim, Woonbae ^a   Wang, Qian ^a   Hwang, Junsik ^a   Lee, Moonchul ^a   Jung, Kyudong ^a   Ham, Sukjin ^a   Moon, Changyoul ^a   Baek, Kyedong ^a   Ha, Byeoungju ^a   Song, Insang ^a,b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b NONE   (South Korea)

Author keywords

Au Sn bonding; Hermeticity; RF MEMS Packaging

Indexed keywords

BONDING; ELECTRIC SWITCHES; EUTECTICS; GOLD; HERMETIC DEVICES; METALLIZING; MICROELECTROMECHANICAL DEVICES; MULTILAYERS; NICKEL; OXIDATION; SILICON WAFERS; TITANIUM;

COMMERCIALIZATION; HERMETICITY; WAFER LEVEL PACKAGING (WLP);

ELECTRONICS PACKAGING;

EID: 24644441047     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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