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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 B, 2004, Pages

Application of highly-doped Si single-electron transistors to an exclusive-NOR operation

(2) Kitade, Tetsuya a Nakajima, Anri a

a HIROSHIMA UNIVERSITY (Japan)

Author keywords

Coulomb blockade; Exclusive NOR; Highly doped Si; Logic circuit; Single electron transistor; SOI

Indexed keywords

CAPACITANCE; COULOMB BLOCKADE; DRY ETCHING; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON CYCLOTRON RESONANCE; LOGIC DEVICES; MOS DEVICES; OSCILLATIONS; SCANNING ELECTRON MICROSCOPY; SILICON;

EXCLUSIVE-NOR; HIGHLY-DOPED SI; LOGIC CIRCUIT; SINGLE-ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 2442611902 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.43.l418 Document Type: Article

Times cited : (8)

References (14)

1
- 21544465440
- J. R. Tucker: J. Appl. Phys. 72 (1992) 4399.
- (1992) J. Appl. Phys. , vol.72 , pp. 4399
- Tucker, J.R.¹

2
- 3643059614
- Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase and M. Tabe: IEEE Int. Electron Devices Meet. (1994) p. 938.
- (1994) IEEE Int. Electron Devices Meet. , pp. 938
- Takahashi, Y.¹ Nagase, M.² Namatsu, H.³ Kurihara, K.⁴ Iwadate, K.⁵ Nakajima, Y.⁶ Horiguchi, S.⁷ Murase, K.⁸ Tabe, M.⁹

3
- 0001551483
- A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama: Appl. Phys. Lett. 70 (1997) 1742.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1742
- Nakajima, A.¹ Futatsugi, T.² Kosemura, K.³ Fukano, T.⁴ Yokoyama, N.⁵

4
- 0001243974
- A. Nakajima, T. Futatsugi, K. Kosemura. T. Fukano and N. Yokoyama: Appl. Phys. Lett. 71 (1997) 353.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 353
- Nakajima, A.¹ Futatsugi, T.² Kosemura, K.³ Fukano, T.⁴ Yokoyama, N.⁵

5
- 0001664590
- T. Sakamoto, H. Kawaura and T. Baba: Appl. Phys. Lett. 72 (1998) 795.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 795
- Sakamoto, T.¹ Kawaura, H.² Baba, T.³

6
- 0027889406
- K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: IEEE Int. Electron Devices Meet. (1993) p. 541.
- (1993) IEEE Int. Electron Devices Meet. , pp. 541
- Yano, K.¹ Ishii, T.² Hashimoto, T.³ Kobayashi, T.⁴ Murai, F.⁵ Seki, K.⁶

7
- 0029516376
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan and D. Buchanan: IEEE Int. Electron Devices Meet. (1995) p. 521.
- (1995) IEEE Int. Electron Devices Meet. , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

8
- 0000769977
- Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara and K. Murase: Appl. Phys. Lett. 76 (2000) 637.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 637
- Takahashi, Y.¹ Fujiwara, A.² Yamazaki, K.³ Namatsu, H.⁴ Kurihara, K.⁵ Murase, K.⁶

9
- 0001707398
- R. A. Smith and H. Ahmed: J. Appl. Phys. 81 (1997) 2699.
- (1997) J. Appl. Phys. , vol.81 , pp. 2699
- Smith, R.A.¹ Ahmed, H.²

10
- 0000425555
- A. Tilke, R. H. Blick, H. Lorenz and J. P. Kotthaus: Appl. Phys. Lett. 75 (1999) 3704.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3704
- Tilke, A.¹ Blick, R.H.² Lorenz, H.³ Kotthaus, J.P.⁴

11
- 2442542685
- A. Nakajima, H. Aoyama and K. Kawamura: Jpn. J. Appl. Phys. 33 (1994) L1796.
- (1994) Jpn. J. Appl. Phys. , vol.33
- Nakajima, A.¹ Aoyama, H.² Kawamura, K.³

12
- 0031077617
- J. B. Kim, S. J. Hong and J. Kim: Int. J. Electron. 82 (1997) 131.
- (1997) Int. J. Electron. , vol.82 , pp. 131
- Kim, J.B.¹ Hong, S.J.² Kim, J.³

13
- 0001738178
- N. J. Stone and H. Ahmed: Appl. Phys. Lett. 73 (1998) 2134.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2134
- Stone, N.J.¹ Ahmed, H.²

14
- 0033095276
- Z. A. K Durrani, A. C. Irvine and H. Ahmed: Appl. Phys. Lett. 74 (1999) 1293.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1293
- Durrani, Z.A.K.¹ Irvine, A.C.² Ahmed, H.³

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