Electrical characterization of Ge microcrystallites by atomic force microscopy using a conducting probe

Thin Solid Films

Volumn 457, Issue 1, 2004, Pages 103-108

  Makihara, K ^a   Okamoto, Y ^a   Nakagawa, H ^a   Ikeda, M ^a   Murakami, H ^a   Higashi, S ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Chemical vapor deposition; Microcrystalline germanium; Raman scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; FILM GROWTH; GERMANIUM; IMAGE ANALYSIS; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SURFACE ROUGHNESS;

ELECTRONIC TRANSPORT; MICROCRYSTALLINE GERMANIUM; SPATIAL RESOLUTION;

CRYSTALLINE MATERIALS;

EID: 2442490740     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.025     Document Type: Conference Paper

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